Recrystallized silicon films on amorphous substrates are mainly
characterized by subgrain boundaries separated by a few microns. Using
seedina from the silicon substrate (lateral epitaxy), subboundary free areas
adjacent to the seed are achieved in the direction of the beam scanninq. We
have demonstrated the large influence of the growth direction and of the
thickness of the silicon layer together on the incubation distance and on
the spacing of the subboundaries. Surprisingly, a variation of the arowth
(scan) velocity of two orders of magnitude (from 1 to 70 cm/s) has no
noticeable influence on these narameters. A I × 10 elliptical Ar+
laser beam has been used in these experiments. An interpretation of these
results in terms of lateral (step) growth and stress will be given.